13 Patents
- US125818652026Manufacturing Method of Package with Magnetic Shielding Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US125753282026High Thermal Stability by Doping of Oxide Capping Layer for Spin Torque Transfer (STT) Magnetic Random Access Memory (MRAM) Applications
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US125639752026Magnetic Memory Device and Method for Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124312142025External Magnetic Field Detection for MRAM Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123811582025Wafer Bonding Method and Bonded Device Structure
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123568652025Multilayer Structure for Reducing Film Roughness in Magnetic Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122508262025Integrated Circuit Device and Method for Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121676992024Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment Enhancement
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121677012024Magnetic Tunnel Junction with Low Defect Rate After High Temperature Anneal for Magnetic Device Applications
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119569712024Cooling for PMA (perpendicular Magnetic Anisotropy) Enhancement of STT-MRAM (spin-torque Transfer-magnetic Random Access Memory) Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US115732702023Electrical Testing Apparatus for Spintronics Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US115694412023Maintaining Coercive Field After High Temperature Anneal for Magnetic Device Applications with Perpendicular Magnetic Anistropy
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US115631702023Fully Compensated Synthetic Ferromagnet for Spintronics Applications
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites