Yuan-cheng Yang

4 Patents

• US123175842025

  Method of Forming High Voltage Transistor and Structure Resulting Therefrom

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.

  0 cites
• US120403972024

  Gate Electrode Extending Into a Shallow Trench Isolation Structure in High Voltage Devices

  Taiwan Semiconductor Manufacturing Company, Ltd.

  0 cites
• US117055152023

  Gate Electrode Extending Into a Shallow Trench Isolation Structure in High Voltage Devices

  Taiwan Semiconductor Manufacturing Company, Ltd.

  0 cites
• US116768502023

  Semiconductor Device and Method of Manufacturing the Same

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.

  0 cites