Patents/Inventors

Yu-wen Liao

New Taipei CityTW24 patents

24 Patents

US126107492026
Method of Forming a Resistive Memory Device with Ultra-thin Barrier Layer
Taiwan Semiconductor Manufacturing Company Limited
0 cites
US125884292026
Resistive Memory Device Including a Silicon Oxide Base Spacer and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites
US125076022025
RRAM with Post-patterned Treated Memory Films to Provide Improved Endurance Characteristics and Methods for Forming
Taiwan Semiconductor Manufacturing Company Limited
0 cites
US123641732025
Resistive Memory Cell Using an Interfacial Transition Metal Compound Layer and Method of Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites
US123364422025
Memory Device with Bottom Electrode
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US122389392025
Memory Device Having Two Memory Stacks Over One Bottom Electrode
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US122323332025
Integrated Circuit
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US122180052025
Integrated Circuit Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121610562024
Memory Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US120756342024
RRAM Memory Cell with Multiple Filaments
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US119800412024
Method to Form Memory Cells Separated by a Void-free Dielectric Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US118942672024
Method for Fabricating Integrated Circuit Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US118897052024
Interconnect Landing Method for RRAM Technology
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US118567972023
Resistive Switching Random Access Memory with Asymmetric Source and Drain
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US118442862023
Flat Bottom Electrode via (BEVA) Top Surface for Memory
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US118390902023
Memory Cells Separated by a Void-free Dielectric Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US118325292023
Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US117514052023
Integrated Circuit and Method for Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US117514852023
Flat Bottom Electrode via (BEVA) Top Surface for Memory
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US117372902023
RRAM Memory Cell with Multiple Filaments
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US117232922023
RRAM Cell Structure with Laterally Offset BEVA/TEVA
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US117232942023
Memory Device and Method for Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US116785922023
Step Height Mitigation in Resistive Random Access Memory Structures
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US116372392023
High Yield RRAM Cell with Optimized Film Scheme
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites