Yu-tsung Lai

10 Patents

• US125575572026

  Method for Fabricating Magnetoresistive Random Access Memory (MRAM) Device

  UNITED MICROELECTRONICS Corp.

  0 cites
• US124714982025

  Semiconductor Device and Method for Fabricating the Same

  UNITED MICROELECTRONICS Corp.

  0 cites
• US123493672025

  Semiconductor Device and Method for Fabricating the Same

  UNITED MICROELECTRONICS Corp.

  0 cites
• US121334742024

  Magnetoresistive Random Access Memory and Method of Manufacturing the Same

  UNITED MICROELECTRONICS Corp.

  0 cites
• US118126692023

  Magnetoresistive Random Access Memory and Method of Manufacturing the Same

  UNITED MICROELECTRONICS Corp.

  0 cites
• US117857852023

  Semiconductor Device and Method for Fabricating the Same

  UNITED MICROELECTRONICS Corp.

  0 cites
• US117789222023

  Semiconductor Device and Method for Fabricating the Same

  UNITED MICROELECTRONICS Corp.

  0 cites
• US117373702023

  Magnetoresistive Random Access Memory (MRAM) Device

  UNITED MICROELECTRONICS Corp.

  0 cites
• US117069932023

  Method of Manufacturing Magnetoresistive Random Access Memory (MRAM) Device

  UNITED MICROELECTRONICS Corp.

  0 cites
• US115455222023

  Semiconductor Device and Method for Fabricating the Same

  UNITED MICROELECTRONICS Corp.

  0 cites