44 Patents
- 0 cites
- US125433952026Semiconductor Structure and Method of Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US125018362025Dual Magnetic Tunnel Junction Devices for Magnetic Random Access Memory (MRAM)
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd
0 cites - US124144772025Magnetic Random Access Memory and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124144792025Sub 60nm Etchless MRAM Devices by Ion Beam Etching Fabricated T-shaped Bottom Electrode
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123619942025Semiconductor Memory Structure and Method for Forming the Semiconductor Memory Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123568652025Multilayer Structure for Reducing Film Roughness in Magnetic Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123325192025Backlight Unit and Color Filter on Array Configuration for a Liquid Crystal Display
Meta Platforms Technologies, LLC
0 cites - US123265732025Optical System Including Pancake Lens Assembly
NATIONAL YANG MING CHIAO TUNG UNIVERSITY
0 cites - US123102452025Etching and Encapsulation Scheme for Magnetic Tunnel Junction Fabrication
Headway Technologies, Inc.
0 cites - US123102522025Semiconductor Memory Structure and Method for Forming the Semiconductor Memory Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122649792025Force Sensing Device and Sensor and Piezoelectric Element Thereof
NATIONAL SUN YAT-SEN UNIVERSITY
0 cites - US122455162025Self-aligned Encapsulation Hard Mask to Separate Physically Under-etched MTJ Cells to Reduce Conductive Re-deposition
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122118762025Extra Doped Region for Back-side Deep Trench Isolation
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US122075672025Under-cut via Electrode for Sub 60nm Etchless MRAM Devices by Decoupling the via Etch Process
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121856382024Metal/dielectric/metal Hybrid Hard Mask to Define Ultra-large Height Top Electrode for Sub 60nm MRAM Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121856412024Silicon Oxynitride Based Encapsulation Layer for Magnetic Tunnel Junctions
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US121419722024Medicine Image Recognition Method, Electronic Device and Readable Storage Medium
Fulian Precision Electronics (Tianjin) Co., Ltd.
0 cites - US121086792024Multiply Spin-coated Ultra-thick Hybrid Hard Mask for Sub 60nm MRAM Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd
0 cites - US120825092024Dual Magnetic Tunnel Junction (DMTJ) Stack Design
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120271912024Free Layer Structure in Magnetic Random Access Memory (MRAM) for Mo or W Perpendicular Magnetic Anisotropy (PMA) Enhancing Layer
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120272702024Method of Training Model for Identification of Disease, Electronic Device Using Method, and Non-transitory Storage Medium
Fulian Precision Electronics (Tianjin) Co., Ltd.
0 cites - 0 cites
- US119859052024Highly Physical Ion Resistive Spacer to Define Chemical Damage Free Sub 60nm MRAM Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119307152024Highly Physical Etch Resistive Photoresist Mask to Define Large Height Sub 30nm via and Metal Hard Mask for MRAM Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119307172024Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure with Perpendicular Magnetic Anisotropy for STT-MRAM
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119033242024Post Treatment to Reduce Shunting Devices for Physical Etching Process
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- 0 cites
- US118568642023Sub 60nm Etchless MRAM Devices by Ion Beam Etching Fabricated T-shaped Bottom Electrode
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118189612023Self-aligned Encapsulation Hard Mask to Separate Physically Under-etched MTJ Cells to Reduce Conductive Re-deposition
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- 0 cites
- US117858632023Under-cut via Electrode for Sub 60nm Etchless MRAM Devices by Decoupling the via Etch Process
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117283662023Extra Doped Region for Back-side Deep Trench Isolation
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117232812023Metal/dielectric/metal Hybrid Hard Mask to Define Ultra-large Height Top Electrode for Sub 60nm MRAM Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116965112023Low Resistance Mgo Capping Layer for Perpendicularly Magnetized Magnetic Tunnel Junctions
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US116318022023Etching and Encapsulation Scheme for Magnetic Tunnel Junction Fabrication
Headway Technologies, Inc.
0 cites - US115979932023Monolayer-by-monolayer Growth of Mgo Layers Using Mg Sublimation and Oxidation
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US115631712023Highly Physical Ion Resistive Spacer to Define Chemical Damage Free Sub 60 Nm MRAM Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US115456222023CMP Stop Layer and Sacrifice Layer for High Yield Small Size MRAM Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites