9 Patents
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- US124244472025Method to Selectively Etch Silicon Nitride to Silicon Oxide Using Water Crystallization
Tokyo Electron Limited
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- US122725582025Selective and Isotropic Etch of Silicon Over Silicon-germanium Alloys and Dielectrics; via New Chemistry and Surface Modification
Tokyo Electron Limited
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- US118043802023High-throughput Dry Etching of Films Containing Silicon-oxygen Components or Silicon-nitrogen Components by Proton-mediated Catalyst Formation
Tokyo Electron Limited
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