13 Patents
- US125576102026Multilayer Isolation Structure for High Voltage Silicon-on-insulator Device
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US124566182025Semiconductor-on-insulator (SOI) Substrate and Method for Forming
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122779772025ONON Sidewall Structure for Memory Device and Method for Making the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US122119062025Method for Eliminating Divot Formation and Semiconductor Device Manufactured Using the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121487562024Selective Polysilicon Growth for Deep Trench Polysilicon Isolation Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120625392024Semiconductor-on-insulator (SOI) Substrate and Method for Forming
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120090332024ONON Sidewall Structure for Memory Device and Method for Making the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US118546212023ONON Sidewall Structure for Memory Device and Methods of Making the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US117988362023Semiconductor Isolation Structure and Method of Making the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117053282023Semiconductor-on-insulator (SOI) Substrate and Method for Forming
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116825782023Multilayer Isolation Structure for High Voltage Silicon-on-insulator Device
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116706892023Method for Eliminating Divot Formation and Semiconductor Device Manufactured Using the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US115945972023Selective Polysilicon Growth for Deep Trench Polysilicon Isolation Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites