9 Patents
- US125955842026Systems and Methods for Producing a Single Crystal Silicon Ingot Using a Vaporized Dopant
Globalwafers Co., Ltd.
0 cites - US125460282026Ingot Puller Apparatus Having Dopant Feeders for Adding a Plurality of Dopant Batches
Globalwafers Co., Ltd.
0 cites - US125037902025Systems and Methods for Producing a Single Crystal Silicon Ingot Using a Vaporized Dopant
Globalwafers Co., Ltd.
0 cites - US124354402025Methods for Producing a Single Crystal Silicon Ingot Using Boric Acid as a Dopant
Globalwafers Co., Ltd.
0 cites - US122217182025Systems and Methods for Controlling a Gas Dopant Vaporization Rate During a Crystal Growth Process
Globalwafers Co., Ltd.
0 cites - US121958712025Systems and Methods for Controlling a Gas Dopant Vaporization Rate During a Crystal Growth Process
Globalwafers Co., Ltd.
0 cites - 0 cites
- US118668442024Methods for Producing a Single Crystal Silicon Ingot Using a Vaporized Dopant
Globalwafers Co., Ltd.
0 cites - US117955692023Systems for Producing a Single Crystal Silicon Ingot Using a Vaporized Dopant
Globalwafers Co., Ltd.
0 cites