Patents/Inventors

Yu-cheng Tung

Kaohsiung CityTW54 patents

50 Patents

US125934372026
Semiconductor Structure and Method for Forming the Same
Fujian Jinhua Integrated Circuit Co., Ltd.
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US125138912025
Semiconductor Device and Method of Fabricating the Same
Fujian Jinhua Integrated Circuit Co., Ltd.
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US124955542025
Three-dimensional Memory Device and Method for Fabricating the Same
Fujian Jinhua Integrated Circuit Co., Ltd.
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US124777222025
Semiconductor Memory Device Comprises a Bit Line Having a Plurality of Pins Extending Toward a Substrate
Fujian Jinhua Integrated Circuit Co., Ltd.
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US124777532025
Semiconductor Device and Fabricating Method Thereof
Fujian Jinhua Integrated Circuit Co., Ltd.
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US123947142025
Semiconductor Device Including Dielectric Insert Structure Directly Under Buried Word Line and Method for Forming the Same
Fujian Jinhua Integrated Circuit Co., Ltd.
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US123961522025
Semiconductor Structure and Method for Forming the Same
Fujian Jinhua Integrated Circuit Co., Ltd.
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US123896172025
Semiconductor Device and Method of Fabricating the Same
Fujian Jinhua Integrated Circuit Co., Ltd.
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US123810822025
Semiconductor Structure, Method for Fabricating Thereof, and Method for Fabricating Semiconductor Layout
Fujian Jinhua Integrated Circuit Co., Ltd.
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US123746212025
Semiconductor Structure and Method of Manufacturing the Same
Fujian Jinhua Integrated Circuit Co., Ltd.
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US123638852025
Semiconductor Memory Device and Method of Fabricating the Same
Fujian Jinhua Integrated Circuit Co., Ltd.
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US123425362025
Semiconductor Memory Device Having Buried Word Line with a Neck Profile Portion
Fujian Jinhua Integrated Circuit Co., Ltd.
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US123343452025
Dynamic Random Access Memory Device with Active Regions of Different Profile Roughness and Method for Forming the Same
Fujian Jinhua Integrated Circuit Co., Ltd.
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US122725942025
Semiconductor Device and Method of Fabricating the Same Having a Second Active Region Disposed at an Outer Side of a First Active Region
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US122611362025
Semiconductor Structure
FUJIAN JINHUA INTEGRATED CIRCUIT CO., Ltd.
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US122565332025
Semiconductor Memory Device and Method of Fabricating the Same
Fujian Jinhua Integrated Circuit Co., Ltd.
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US122242832025
Semiconductor Memory Device
Fujian Jinhua Integrated Circuit Co., Ltd.
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US122257152025
Semiconductor Device Having Semiconductor Layers Disposed Between Upper Portions of the Isolation Structures and the Active Regions
Fujian Jinhua Integrated Circuit Co., Ltd.
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US122009232025
Method of Fabricating Semiconductor Device Having Bit Line Comprising a Plurality of Pins Extending Toward the Substrate
Fujian Jinhua Integrated Circuit Co., Ltd.
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US121563992024
Semiconductor Memory Device Having Plug and Wire
Fujian Jinhua Integrated Circuit Co., Ltd.
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US121502912024
Semiconductor Memory Device
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US121333732024
Semiconductor Structure Including Capacitor and Method for Forming the Same
Fujian Jinhua Integrated Circuit Co., Ltd.
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US121144872024
Semiconductor Memory Device Having Bit Lines and Isolation Fins Disposed on the Substrate
Fujian Jinhua Integrated Circuit Co., Ltd.
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US121006172024
Method of Manufacturing Semiconductor Memory Device
Fujian Jinhua Integrated Circuit Co., Ltd.
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US120756092024
Contact Structure, Contact Pad Layout and Structure, Mask Combination and Manufacturing Method Thereof
Fujian Jinhua Integrated Circuit Co., Ltd.
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US120683162024
Semiconductor Device and Method of Forming the Same
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US120626892024
Manufacturing Method of Capacitor Structure
Fujian Jinhua Integrated Circuit Co., Ltd.
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US119962902024
Semiconductor Structure, Method for Fabricating Thereof, and Method for Fabricating Semiconductor Layout
Fujian Jinhua Integrated Circuit Co., Ltd.
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US119800182024
Semiconductor Device and Method of Fabricating the Same
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US119675712024
Semiconductor Structure and Forming Method Therefor
FUJIAN JINHUA INTEGRATED CIRCUIT CO., Ltd.
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US119306312024
Semiconductor Memory Device and Method of Fabricating the Same
Fujian Jinhua Integrated Circuit Co., Ltd.
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US119105952024
Semiconductor Memory Device
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US119031812024
Semiconductor Structure and Method for Forming the Same
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US118815032024
Semiconductor Memory Device
Fujian Jinhua Integrated Circuit Co., Ltd.
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US118626662024
Capacitor Structure and Manufacturing Method Thereof
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US118256442023
Semiconductor Memory Device
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US118188802023
Semiconductor Structure Including Capacitor and Method for Forming the Same
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US117841842023
Semiconductor Memory Device
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US117658862023
Semiconductor Memory Device
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US117587102023
Memory Device and Fabrication Method Thereof
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US117440622023
Semiconductor Device Having Bit Line Comprising a Plurality of Pins Extending Toward the Substrate
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US117215522023
Semiconductor Device
Fujian Jinhua Integrated Circuit Co., Ltd.
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US117069112023
Method of Fabricating Semiconductor Memory Having a Second Active Region Disposed at an Outer Side of a First Active Region
Fujian Jinhua Integrated Circuit Co., Ltd.
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US116887642023
Semiconductor Structure and Method of Forming Same
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US116769942023
Manufacturing Method of Semiconductor Device and Semiconductor Device
Fujian Jinhua Integrated Circuit Co., Ltd.
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US116643662023
Method of Forming Semiconductor Device
UNITED MICROELECTRONICS Corp.
0 cites
US116658852023
Semiconductor Memory Device
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US116109002023
Semiconductor Memory Device
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US116006222023
Method of Forming Semiconductor Memory Device Comprises a Bit Line Having a Plurality of Pins Extending Along a Direction Being Perpendicular to a Substrate
Fujian Jinhua Integrated Circuit Co., Ltd.
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US115576452023
Semiconductor Memory Device and Method of Forming the Same
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites