4 Patents
- US126221832026Phase Change Memory (PCM) Cell Structure Having Heating Layer and Formation Method Therefor
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites - US126157592026Semiconductor Structure and Method for Forming the Same with Multiple Gate Conductive Layers Having Different Characteristics
CXMT Corporation
0 cites - US126105372026Semiconductor Structure with Buffer Layer Between Conductive Contact and Word Line and Method for Forming the Same, and Memory
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites - 0 cites