27 Patents
- US125139192025Method of Manufacturing Metal Nitride Film and Electronic Device Including Metal Nitride Film
Samsung Electronics Co., Ltd.
0 cites - US124733092025Organometallic Compound and Method of Manufacturing Integrated Circuit Using the Same
ADEKA CORPORATION
0 cites - US124143132025High-k Capacitor Dielectric Having a Metal Oxide Area Comprising Boron, Electrical Device and Semiconductor Apparatus Including the Same
Samsung Electronics Co., Ltd.
0 cites - US123782722025Yttrium Compound and Method of Manufacturing Integrated Circuit Device by Using the Same
ADEKA CORPORATION
0 cites - US123566402025High-k Capacitor Dielectric Having a Metal Oxide Area Comprising Boron, Electrical Device and Semiconductor Apparatus Including the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US123343082025Batch-type Apparatus for Atomic Layer Etching (ALE), and ALE Method and Semiconductor Device Manufacturing Method Based on the Same Apparatus
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US123241452025Semiconductor Device with Capping Conductive Layer on an Electrode and Method of Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US121991372025Integrated Circuit Devices and Methods of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US120823952024Semiconductor Memory Devices and Methods of Fabricating the Same
Samsung Electronics Co., Ltd.
0 cites - US120683602024Capacitor, Semiconductor Device Including the Same, and Method of Fabricating Capacitor
Samsung Electronics Co., Ltd.
0 cites - US120340362024Semiconductor Device and Semiconductor Apparatus Including the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US119787612024Capacitor, Semiconductor Device Including the Same, and Method of Fabricating Capacitor
Samsung Electronics Co., Ltd.
0 cites - US119675022024Methods of Forming Material Layer, Semiconductor Devices, and Methods of Manufacturing the Same
ADEKA CORPORATION
0 cites - 0 cites
- US118699262024High-k Capacitor Dielectric Having a Metal Oxide Area Comprising Boron, Electrical Device, and Semiconductor Apparatus Including the Same
Samsung Electronics Co., Ltd.
0 cites - US118109462023Integrated Circuit Device Including Capacitor with Metal Nitrate Interfacial Layer
Samsung Electronics Co., Ltd.
0 cites - US117989802023Integrated Circuit Device and Electronic Device Including Capacitor with Interfacial Layer Containing Metal Element, Other Element, Nitrogen, and Oxygen
Samsung Electronics Co., Ltd.
0 cites - US117788052023Semiconductor Memory Devices and Methods of Fabricating the Same
Samsung Electronics Co., Ltd.
0 cites - US117281602023Method of Forming Oxide Film Including Two Non-oxygen Elements, Method of Manufacturing Semiconductor Device, Method of Forming Dielectric Film, and Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites - US116658842023Semiconductor Device with Capping Conductive Layer on an Electrode and Method of Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US116417302023Semiconductor Memory Devices and Methods of Fabricating the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US116006212023Semiconductor Memory Device and Method of Fabricating the Same
Samsung Electronics Co., Ltd.
0 cites - US115945922023Capacitor, Semiconductor Device Including the Same, and Method of Fabricating Capacitor
Samsung Electronics Co., Ltd.
0 cites - 0 cites