10 Patents
- US125936282026Silicon Precursor Having a Heterocyclic Group, Composition for Depositing a Silicon-containing Layer Comprising the Same and Method of Depositing a Silicon-containing Layer Using the Same
Samsung Electronics Co., Ltd.
0 cites - US125460012026Composition for Depositing a Silicon-containing Layer and Method of Depositing a Silicon-containing Layer Using the Same
DNF Co., Ltd
0 cites - US124733092025Organometallic Compound and Method of Manufacturing Integrated Circuit Using the Same
ADEKA CORPORATION
0 cites - US124102032025Organometallic Adduct Compound and Method of Manufacturing Integrated Circuit Using the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US123981662025Method of Selectively Forming Cobalt Metal Layer by Using Cobalt Compound, and Method of Fabricating Semiconductor Device by Using Cobalt Compound
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US123782722025Yttrium Compound and Method of Manufacturing Integrated Circuit Device by Using the Same
ADEKA CORPORATION
0 cites - 0 cites
- 0 cites
- US117461212023Molybdenum Compound and Method of Manufacturing Integrated Circuit Device Using the Same
ADEKA CORPORATION
0 cites - US117281602023Method of Forming Oxide Film Including Two Non-oxygen Elements, Method of Manufacturing Semiconductor Device, Method of Forming Dielectric Film, and Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites