3 Patents
- US117356592023Integrated Circuit Devices Including a Vertical Field-effect Transistor (VFET) and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - US116997542023Gate Structure of Vertical FET and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US115521822023Integrated Circuit Devices Including a Vertical Field-effect Transistor (VFET) and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites