5 Patents
- US126181722026Seed Substrate for Epitaxial Growth Use and Method for Manufacturing Same, and Semiconductor Substrate and Method for Manufacturing Same
SHIN-ETSU HANDOTAI CO., Ltd.
0 cites - 0 cites
- US119329362024Method for Producing a Group III Compound Crystal by Hydride Vapor Phase Epitaxy on a Seed Substrate Formed on a Group III Nitride Base Substrate
SHIN-ETSU CHEMICAL CO., Ltd.
0 cites - US118760142024Method of Transferring Device Layer to Transfer Substrate and Highly Thermal Conductive Substrate
SHIN-ETSU CHEMICAL CO., Ltd.
0 cites - US116544262023Method for Manufacturing Modified Aluminosilicate, Modified Aluminosilicate, and Method for Manufacturing Aromatic Dihydroxy Compound Using the Same
MITSUI CHEMICALS, Inc.
0 cites