Patents/Inventors

Yoshihide Kihara

MiyagiJP37 patents

29 Patents

US126222342026
Selective In-situ Carbon-based Mask Protection
Tokyo Electron Limited
0 cites
US126092872026
Method for Etching Film and Plasma Processing Apparatus
TOKYO ELECTRON LIMITED
0 cites
US125608632026
Etching Method and Plasma Processing System
TOKYO ELECTRON LIMITED
0 cites
US125371712026
Substrate Processing Method and Substrate Processing Apparatus
TOKYO ELECTRON LIMITED
0 cites
US125326812026
Etching Method and Plasma Processing System
TOKYO ELECTRON LIMITED
0 cites
US125123252025
Etching Method and Etching Apparatus
TOKYO ELECTRON LIMITED
0 cites
US124761152025
Method for Processing Workpiece
TOKYO ELECTRON LIMITED
0 cites
US124127492025
Etching Method and Plasma Processing System
TOKYO ELECTRON LIMITED
0 cites
US124008632025
Method for Etching for Semiconductor Fabrication
TOKYO ELECTRON LIMITED
0 cites
US124008352025
Plasma Processing Method and Plasma Processing System
Tokyo Electron Limited
0 cites
US123879412025
Etching Method and Plasma Processing Apparatus
TOKYO ELECTRON LIMITED
0 cites
US123879362025
Plasma Processing Method and Plasma Processing System
TOKYO ELECTRON LIMITED
0 cites
US123680272025
Substrate Processing Method and Substrate Processing Apparatus
Tokyo Electron Limited
0 cites
US123343432025
Substrate Processing Method and Substrate Processing System
TOKYO ELECTRON LIMITED
0 cites
US123082122025
In-situ Adsorbate Formation for Plasma Etch Process
Tokyo Electron Limited
0 cites
US121989382025
Etching Method
TOKYO ELECTRON LIMITED
0 cites
US121424842024
Etching Method
TOKYO ELECTRON LIMITED
0 cites
US120716872024
Plasma Processing Method and Plasma Processing Apparatus
TOKYO ELECTRON LIMITED
0 cites
US119617462024
Substrate Processing Method and Substrate Processing Apparatus
TOKYO ELECTRON LIMITED
0 cites
US119553372024
Substrate Processing Method and Substrate Processing System
TOKYO ELECTRON LIMITED
0 cites
US118239032023
Method for Processing Workpiece
Tokyo Electron Limited
0 cites
US117987932023
Substrate Processing Method, Component Processing Method, and Substrate Processing Apparatus
TOKYO ELECTRON LIMITED
0 cites
US117281662023
Substrate Processing Method and Substrate Processing Apparatus
TOKYO ELECTRON LIMITED
0 cites
US116580362023
Apparatus for Processing Substrate
TOKYO ELECTRON LIMITED
0 cites
US116370032023
Method for Etching Film and Plasma Processing Apparatus
TOKYO ELECTRON LIMITED
0 cites
US116159642023
Etching Method
TOKYO ELECTRON LIMITED
0 cites
US116005012023
Etching Method and Plasma Processing Apparatus
TOKYO ELECTRON LIMITED
0 cites
US115574852023
Plasma Processing Method and Plasma Processing Apparatus
TOKYO ELECTRON LIMITED
0 cites
US115519372023
Etching Method
TOKYO ELECTRON LIMITED
0 cites