Yorinobu Fujino

4 Patents

• US124888342025

  Read Assist Circuit for Memory Device and Operation Method Thereof

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US123743762025

  Decoder Circuits Using Shared Transistors for Low-power, High-speed, and Small Area

  Taiwan Semiconductor Manufacturing Company, Ltd.

  0 cites
• US123408382025

  Drive Circuit with Improved Timing Margin for Memory Device

  Taiwan Semiconductor Manufacturing Company, Ltd.

  0 cites
• US122833372025

  Sense Amplifier with Reduced Voltage Offset

  Taiwan Semiconductor Manufacturing Company, Ltd.

  0 cites