30 Patents
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- US122794152025Method of Fabricating Semiconductor Memory Device Having Protruding Contact Portion
Samsung Electronics Co., Ltd.
0 cites - US122074562025Method of Forming an Integrated Circuit Devices Having Buried Word Lines
Samsung Electronics Co., Ltd.
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- US120698492024Semiconductor Devices and Methods of Forming Semiconductor Devices
Samsung Electronics Co., Ltd.
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- US119293242024Semiconductor Devices Having Improved Electrical Characteristics and Methods of Fabricating the Same
Samsung Electronics Co., Ltd.
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- US118896812024Integrated Circuit Devices Having Buried Word Lines Therein
Samsung Electronics Co., Ltd.
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- US117440632023Semiconductor Memory Devices Including Separate Upper and Lower Bit Line Spacers and Methods of Forming the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US117231912023Semiconductor Memory Devices Having Protruding Contact Portions
Samsung Electronics Co., Ltd.
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- US116658832023Semiconductor Memory Device Having Spacer Capping Pattern Disposed Between Burried Dielectic Pattern and an Air Gap and Method of Fabricating Same
Samsung Electronics Co., Ltd.
0 cites - US116581172023Semiconductor Devices Having Improved Electrical Characteristics and Methods of Fabricating the Same
Samsung Electronics Co., Ltd.
0 cites - US116462252023Semiconductor Devices and Methods of Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US116160662023Semiconductor Device and Manufacturing Method of the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US116108912023Semiconductor Device Including Storage Node Electrode Including Step and Method of Manufacturing the Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites - US116108962023Semiconductor Devices and Methods of Forming Semiconductor Devices
Samsung Electronics Co., Ltd.
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