3 Patents
- US125139712025Method for Making Elevated Source-drain Structure of PMOS in FDSOI Process
Shanghai Huali Integrated Circuit Corporation
0 cites - US124009082025Epitaxial Growth Method for FDSOI Hybrid Region
Shanghai Huali Integrated Circuit Corporation
0 cites - US123082812025Method for Manufacturing Isolation Structure of Hybrid Epitaxial Area and Active Area in FDSOI
Shanghai Huali Integrated Circuit Corporation
0 cites