Patents/Inventors

Yongsung Cho

Suwon-siKR34 patents

29 Patents

US125974692026
Nonvolatile Memory Device, Storage Device Including the Same, and Method of Testing Nonvolatile Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US125866502026
Page Buffer Circuit and Memory Device Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US125721912026
Power Management Integrated Circuit, Electronic Device Having the Same, and Operating Method Thereof
SAMSUNG ELECTRONICS CO., Ltd.
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US125556392026
Memory Device Including Page Buffer Circuit
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US125121662025
Flash Memory for Adjusting Trip Voltage Using Voltage Regulator and Sampling Switch Circuit and Sensing Method Thereof
Samsung Electronics Co., Ltd.
0 cites
US125058682025
Memory Device Including Page Buffer Circuit
SAMSUNG ELECTRONICS CO., Ltd.
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US124888382025
Memory Device Including Page Buffer Circuit
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US124759542025
Memory Device Including Page Buffer Circuit and SSD Including the Memory Device, and Method of Using the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US124511922025
Non-volatile Memory Device with High Voltage Region and Low Voltage Region
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US123474992025
Page Buffer Circuit and Memory Device Including the Same
Samsung Electronics Co., Ltd.
0 cites
US123475002025
Memory Device Including Vertical Channel Structure
Samsung Electronics Co., Ltd.
0 cites
US123003292025
Memory Device Including Vertical Channel Structure
Samsung Electronics Co., Ltd.
0 cites
US122178042025
Nonvolatile Memory Device Including Combined Sensing Node and Cache Read Method Thereof
Samsung Electronics Co., Ltd.
0 cites
US122115592025
Page Buffer Circuit and Memory Device Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US121987822025
Memory Device, Operation Method of Memory Device, and Page Buffer Included in Memory Device
Samsung Electronics Co., Ltd.
0 cites
US120739092024
Page Buffer Circuit and Memory Device Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US120739152024
Memory Device, Operation Method of Memory Device, and Page Buffer Included in Memory Device
Samsung Electronics Co., Ltd.
0 cites
US120571732024
Page Buffer Circuit and Memory Device Including the Same
Samsung Electronics Co., Ltd.
0 cites
US120407992024
Clock Generator and Electronic Device Including the Same
Samsung Electronics Co., Ltd.
0 cites
US120025182024
Memory Device Performing Temperature Compensation and Operating Method Thereof
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US119744402024
Page Buffer Circuit and Memory Device Including the Same
Samsung Electronics Co., Ltd.
0 cites
US119421662024
Nonvolatile Memory Device, Storage Device Including Nonvolatile Memory Device, and Operating Method of Nonvolatile Memory Device
Samsung Electronics Co., Ltd.
0 cites
US118427902023
Page Buffer Circuit and Memory Device Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US117619812023
Method and Apparatus for Identifying Sample Position in Atomic Force Microscope
PARK SYSTEMS Corp.
0 cites
US116460642023
Page Buffer Circuit and Memory Device Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US116460872023
Nonvolatile Memory Device, Storage Device Including Nonvolatile Memory Device, and Operating Method of Nonvolatile Memory Device
Samsung Electronics Co., Lid.
0 cites
US116261662023
Memory Device for Performing Temperature Compensation and Operating Method Thereof
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US116003362023
Page Buffer Circuits and Nonvolatile Memory Devices Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US115689032023
Page Buffer Circuit and Memory Device Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites