14 Patents
- US125121702025Method of Determining and Preprogramming Over-erases Groups of Memory Cells
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US122242772025Memory Devices Having Cell Over Periphery Structure, Memory Packages Including the Same, and Methods of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US122178072025Non-volatile Memory Device and Programming Method Thereof
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US121190462024Nonvolatile Memory Device Having Multi-stack Memory Block and Method of Operating the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US118812722024Nonvolatile Memory Device and Method of Programming in a Nonvolatile Memory
Samsung Electronics Co., Ltd.
0 cites - 0 cites
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- US117974052023Nonvolatile Memory Device Having Cell-over-periphery (COP) Structure with Address Re-mapping
Samsung Electronics Co., Ltd.
0 cites - US117986292023Nonvolatile Memory Device, Storage Device, and Operating Method of Nonvolatile Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US116158552023Nonvolatile Memory Device and Method of Programming in a Nonvolatile Memory
Samsung Electronics Co., Ltd.
0 cites - US115812972023Memory Devices Having Cell Over Periphery Structure, Memory Packages Including the Same, and Methods of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites