4 Patents
- US120210822024Enhanced Channel Strain to Reduce Contact Resistance in NMOS FET Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118550892023Method and Structure for Finfet Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US115749072023Enhanced Channel Strain to Reduce Contact Resistance in NMOS FET Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US115692302023Method and Structure for Finfet Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites