Yohei Fujikawa

6 Patents

• US119461562024

  Sic Single Crystal Growth Crucible, Sic Single Crystal Manufacturing Method, and Sic Single Crystal Manufacturing Apparatus

  Resonac Corporation

  0 cites
• US119056212024

  Sic Single Crystal, Method of Manufacturing Sic Ingot, and Method of Manufacturing Sic Wafer

  DENSO CORPORATION

  0 cites
• US118147492023

  Single Crystal Growth Crucible and Single Crystal Growth Method

  Resonac Corporation

  0 cites
• US117611142023

  Method of Producing Sic Single Crystal Ingot

  Resonac Corporation

  0 cites
• US116437492023

  Crucible and Sic Single Crystal Growth Apparatus

  SHOWA DENKO K.K.

  0 cites
• US116189692023

  Sic Single Crystal Composite and Sic Ingot

  DENSO CORPORATION

  0 cites