4 Patents
- US125751722026Metal Gate Electrode Formation of Memory Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123826912025Effective Work Function Tuning via Silicide Induced Interface Dipole Modulation for Metal Gates
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121425312024Pre-deposition Treatment for FET Technology and Devices Formed Thereby
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119905222024Effective Work Function Tuning via Silicide Induced Interface Dipole Modulation for Metal Gates
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites