8 Patents
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- US121333952024Multilayered Seed for Perpendicular Magnetic Structure Including an Oxide Layer
Avalanche Technology, Inc.
0 cites - US121334712024Magnetic Memory Element Including Perpendicular Enhancement Layers and Dual Oxide Cap Layers
Avalanche Technology, Inc.
0 cites - US117857842023Multilayered Seed for Perpendicular Magnetic Structure Including an Oxide Layer
Avalanche Technology, Inc.
0 cites - US117588222023Magnetic Memory Element Incorporating Dual Perpendicular Enhancement Layers
Avalanche Technology, Inc.
0 cites - US116785862023Memory System Having Thermally Stable Perpendicular Magneto Tunnel Junction (MTJ) and a Method of Manufacturing Same
Avalanche Technology, Inc.
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