Patents/Inventors

Yih Wang

Hsinchu CityTW135 patents

152 Patents

US125974662026
Semiconductor Memory Devices with Differential Threshold Voltages
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US125914292026
Memory Interface
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US125866192026
Integrated Circuit Device and Methods
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US125751072026
Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US125622162026
Circuit with Swept Voltage on Bit Line or Bit Line Bar
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US125637212026
Memory Device and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US125413192026
Computing-in-memory Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US125388512026
Memory Packages and Methods of Forming Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US124890512025
One-time-programmable Memory Device Including an Antifuse Structure and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites
US124825312025
Dynamic Error Monitor and Repair
Taiwan Semiconductor Manufacturing Company, Ltd
0 cites
US124631512025
PUF Memory Devices and Methods of Manufacturing Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US124648112025
Memory Devices and Methods of Manufacturing Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US124234942025
Memory Device with Improved Anti-fuse Read Current
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US124242572025
Memory Devices with Dual-side Access Circuits and Methods for Operating the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US124067022025
Switches to Reduce Routing Rails of Memory System
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US124069232025
One-time-programmable Memory Device Including an Antifuse Structure and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites
US124023762025
High-voltage Nano-sheet Transistor
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US123944692025
DRAM Computation Circuit and Method
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US123880652025
Memory Circuits
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US123898062025
MRAM Cell and MRAM
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US123809502025
Non-volatile Static Random Access Memory (NVSRAM) with Multiple Magnetic Tunnel Junction Cells
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US123827142025
Memory Devices and Methods of Manufacturing Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US123743962025
Memory Including Metal Rails with Balanced Loading
Taiwan Semiconductor Manufacturing Company Ltd.
0 cites
US123619812025
Using Embedded Switches for Reducing Capacitive Loading on a Memory System
Taiwan Semiconductor Manufacturing Company Limited
0 cites
US123550262025
Method of Writing to or Erasing Multi-bit Memory Storage Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US123475052025
Memory Device and Operating Method of the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US123494232025
Memory Devices and Methods of Manufacturing Thereof
Taiwan Semiconductor Manufacturing Company Limited
0 cites
US123224322025
Method and System for Refresh of Memory Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US123224352025
Sense Amplifier with Read Circuit for Compute-in-memory
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US122937992025
Memory Circuit and Method of Operating Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US122885772025
Sensing Amplifier, Method and Controller for Sensing Memory Cell
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US122833362025
System for Differentiated Thermal Throttling of Memory and Method of Operating Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US122848042025
Memory Devices, Semiconductor Devices, and Methods of Operations a Memory Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US122724202025
Series of Parallel Sensing Operations for Multi-level Cells
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US122664242025
Memory Circuit and Method of Operating Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US122608972025
Separated Read BL Scheme in 3T Dram for Read Speed Improvement
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US122609042025
Memory Device with Additional Write Bit Lines
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US122609282025
Memory Devices with Backside Boost Capacitor and Methods for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US122611522025
Vertical Interconnect Structures in Three-dimensional Integrated Circuits
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US122549232025
Nonvolatile SRAM
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US122493902025
Memory Systems with Vertical Integration
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US122435892025
Memory Device and Method for Operating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US122436182025
Method of Manufacturing Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US122303382025
Semiconductor Memory Devices with Diode-connected MOS
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US122303592025
Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US122177822025
Current Steering in Reading Magnetic Tunnel Junction
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US122177902025
Memory Array Connections
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US122178222025
Memory Device with Source Line Control
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US122180472025
Memory Devices and Methods of Manufacturing Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US122103682025
Bias Generating Devices and Methods for Generating Bias
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US122115682025
Multi-fuse Memory Cell Circuit and Method
Taiwan Semiconductor Manufacturing Company Limited
0 cites
US122056482025
Three-dimensional One Time Programmable Memory
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121909312025
Semiconductor Memory Devices and Methods of Manufacturing Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121909862025
Sense Amplifier for Coupling Effect Reduction
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US121913952025
Dual Gate Control for Trench Shaped Thin Film Transistors
Intel Corporation
0 cites
US121932042025
Memory Devices and Methods of Manufacturing Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121932232025
Memory Device with Improved Anti-fuse Read Current
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121833972024
Memory Circuits and Devices, and Methods Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US121760492024
MIM Efuse Memory Devices and Fabrication Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121762842024
Through Plate Interconnect for a Vertical MIM Capacitor
Intel Corporation
0 cites
US121657042024
Memory Device with Write Pulse Trimming
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121375702024
Three Dimensional Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US121375712024
Integrated Circuit Including Three-dimensional Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US121121632024
Memory Interface
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121145062024
Semiconductor Structure and Method of Fabricating the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US121007052024
Deep Trench via for Three-dimensional Integrated Circuit
Intel Corporation
0 cites
US120945582024
Multiple Stack High Voltage Circuit for Memory
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120873452024
Balanced Negative Bitline Voltage for a Write Assist Circuit
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120873542024
Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US120894022024
Integrated Circuit Layout and Method
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120894142024
Memory Device and Method of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US120806432024
Integrated Circuit Structures Having Differentiated Interconnect Lines in a Same Dielectric Layer
Intel Corporation
0 cites
US120756142024
MIM Memory Cell with Backside Interconnect Structures
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120682842024
Vertical Interconnect Structures with Integrated Circuits
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120624082024
Switches to Reduce Routing Rails of Memory System
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120637732024
Layout Structure Including Anti-fuse Cell
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US120637862024
Compute-in-memory Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120528592024
Non-volatile Memory Device with Reduced Area
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US120481472024
Layout Structure Including Anti-fuse Cell
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US120264042024
Memory Device for Scheduling Maximum Number of Memory Macros Write Operations at Re-arranged Time Intervals
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US120272042024
Memory Including Metal Rails with Balanced Loading
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120272202024
One-time-programmable Memory
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120147682024
DRAM Computation Circuit and Method
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120108332024
Method and Structure for Reduce OTP Cell Area and Leakage
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US120025282024
Memory Device and Operating Method of the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120025342024
Memory Array Word Line Routing
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US119978432024
4CPP SRAM Cell and Array
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119978472024
Thin Film Transistors with Spacer Controlled Gate Length
Intel Corporation
0 cites
US119841642024
Non-volatile Static Random Access Memory (nvsram) with Multiple Magnetic Tunnel Junction Cells
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119785092024
Semiconductor Memory Devices with Differential Threshold Voltages
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119787232024
Vertical Interconnect Structures in Three-dimensional Integrated Circuits
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119788042024
Recessed Thin-channel Thin-film Transistor
Intel Corporation
0 cites
US119634632024
MRAM Cell and MRAM
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119539272024
Bias Generating Devices and Methods for Generating Bias
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US119551912024
Semiconductor Memory Devices with Diode-connected MOS
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US119552012024
Memory Device
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US119489722024
High-voltage Nano-sheet Transistor
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US119421552024
Semiconductor Memory Devices with Dielectric Fin Structures
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119421772024
Using Embedded Switches for Reducing Capacitive Loading on a Memory System
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US119356102024
Dynamic Error Monitor and Repair
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119157872024
Integrated Circuit Device and Methods
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119010352024
Method of Differentiated Thermal Throttling of Memory and System Therefor
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119031882024
Memory Devices, Semiconductor Devices, and Methods of Operating a Memory Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US118699712024
Multi-bit Memory Storage Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US118627282024
Dual Gate Control for Trench Shaped Thin Film Transistors
Intel Corporation
0 cites
US118627292024
Vertical Multi-gate Thin Film Transistors
Intel Corporation
0 cites
US118546162023
Memory Including Metal Rails with Balanced Loading
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US118546632023
Memory Circuit and Method of Operating Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US118550462023
Memory Packages and Methods of Forming Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US118567622023
Memory Devices and Methods of Manufacturing Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US118567862023
Integrated Circuit Including Three-dimensional Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US118483812023
Methods of Operating Multi-bit Memory Storage Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US118495742023
Layout Structure of Storage Cell and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US118427812023
Layout Structures of Memory Array and Related Methods
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US118430542023
Vertical Architecture of Thin Film Transistors
Intel Corporation
0 cites
US118373002023
Multi-fuse Memory Cell Circuit and Method
Taiwan Semiconductor Manufacturing Company Limited
0 cites
US118237692023
Reducing Capacitive Loading of Memory System Based on Switches
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US118106112023
Method and System for Refresh of Memory Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US118106352023
Sense Amplifier for Coupling Effect Reduction
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US117910052023
Memory Circuit and Method of Operating Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US117765952023
Memory Device with Source Line Control
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US117709342023
Semiconductor Structure and Method of Fabricating the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US117565912023
Switches to Reduce Routing Rails of Memory System
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US117566402023
MIM Efuse Memory Devices and Fabrication Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US117587112023
Thin-film Transistor Embedded Dynamic Random-access Memory with Shallow Bitline
Intel Corporation
0 cites
US117587152023
System and Method for Reducing Cell Area and Current Leakage in Anti-fuse Cell Array
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US117496642023
Memory Circuits
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US117420212023
Memory Device with Write Pulse Trimming
Taiwan Semiconductor Manufacturing Company Ltd.
0 cites
US117352352023
Series of Parallel Sensing Operations for Multi-level Cells
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US117352592023
Read Method, Write Method and Memory Circuit Using the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US117352802023
Memory Device and Operating Method of the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US117231882023
Replacement Metal COB Integration Process for Embedded DRAM
Intel Corporation
0 cites
US117145702023
Computing-in-memory Device and Method
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US117051772023
Semiconductor Memory Devices and Methods of Manufacturing Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US116964372023
Integrated Circuit Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US116884812023
Semiconductor Memory Devices with Diode-connected MOS
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US116902152023
Self-aligned Bitline and Capacitor via Formation
Intel Corporation
0 cites
US116814682023
Memory Device for Scheduling Maximum Number of Memory Macros Write Operations at Re-arranged Time Intervals
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US116824332023
Multiple Stack High Voltage Circuit for Memory
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US116766412023
Memory Systems with Vertical Integration
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US116766482023
Current Steering in Reading Magnetic Tunnel Junction
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US116578732023
Non-volatile Static Random Access Memory (nvsram) with Multiple Magnetic Tunnel Junction Cells
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US116534872023
4F2 DRAM Cell Using Vertical Thin Film Transistor
Intel Corporation
0 cites
US116534922023
Memory Devices and Methods of Manufacturing Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING LIMITED
0 cites
US116314402023
Sensing Amplifier, Method and Controller for Sensing Memory Cell
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US116054272023
Memory Device with Write Pulse Trimming
Taiwan Semiconductor Manufacturing Company Ltd.
0 cites
US116056392023
One-time-programmable Memory Device Including an Antifuse Structure and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites
US116006262023
Semiconductor Device Including Anti-fuse Cell
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US116011172023
Sense Amplifier for Coupling Effect Reduction
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US115630142023
Memory Devices and Methods of Manufacturing Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US115630152023
Memory Devices and Methods of Manufacturing Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
0 cites
US115452182023
Nonvolatile SRAM
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites