12 Patents
- US125882712026Multi-layer Electrode to Improve Performance of Ferroelectric Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123566312025Feram with Laminated Ferroelectric Film and Method Forming Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123493662025Interface Film to Mitigate Size Effect of Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121375722024Ferroelectric Memory Device and Method of Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120756262024Memory Window of MFM MOSFET for Small Cell Size
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120698672024Ferroelectric Random Access Memory Device with Seed Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120355372024Interface Film to Mitigate Size Effect of Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119676112024Multilayer Structure, Capacitor Structure and Electronic Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US119161272024Multi-layer Electrode to Improve Performance of Ferroelectric Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118442262023Feram with Laminated Ferroelectric Film and Method Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117232122023Memory Window of MFM MOSFET for Small Cell Size
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116659092023Feram with Laminated Ferroelectric Film and Method Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites