32 Patents
- US126040172026Encoding Method, Encapsulation Method, Display Method, Apparatus, and Electronic Device
HUAWEI TECHNOLOGIES CO., Ltd.
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- US125473272026Program Speed Compensation for Non-volatile Memory Cells
Silicon Storage Technology, Inc.
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- US125110732025Coarse and Fine Programming of Non-volatile Memory Cells
Silicon Storage Technology, Inc.
0 cites - US124573342025Encoding and Decoding Methods and Apparatuses for Enhancement Layer
HUAWEI TECHNOLOGIES CO., Ltd.
0 cites - US124490202025Adjustment Mechanism and Adjustment Device Comprising Such Adjustment Mechanism
Mci (Mirror Controls International) Netherlands B.V.
0 cites - US124312032025Memory Program-verify with Adaptive Sense Time Based on Row Location
Sandisk Technologies, Inc.
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- US123566802025Nanosheet Device with Air-gaped Source/drain Regions
International Business Machines Corporation
0 cites - US122195122025Small Cell Demodulation Reference Signal and Initial Synchronization
Malikie Innovations Limited
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- US121484892024Early Detection of Programming Failure for Non-volatile Memory
Sandisk Technologies LLC
0 cites - US121190652024Non-volatile Memory with Zoned Control for Limiting Programming for Different Groups of Non-volatile Memory Cells
Sandisk Technoloiges LLC
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- US120945372024Non-volatile Memory with Differential Temperature Compensation for Super Page Programming
Sandisk Technologies LLC
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- US120751662024Spherical Image Processing Method and Apparatus, and Server
HUAWEI TECHNOLOGIES CO., Ltd.
0 cites - US120466802024Inner Spacer Formation for Nanosheet Transistors
International Business Machines Corporation
0 cites - 0 cites
- US119728122024Non-volatile Memory with Data Refresh Based on Data States of Adjacent Memory Cells
Sandisk Technologies LLC
0 cites - US119551842024Memory Cell Group Read with Compensation for Different Programming Speeds
Sandisk Technologies LLC
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- US118940712024Non-volatile Memory with Differential Temperature Compensation for Bulk Programming
Sandisk Technologies LLC
0 cites - US118876742024Utilizing Data Pattern Effect to Control Read Clock Timing and Bit Line Kick for Read Time Reduction
SANDISK TECHNOLOGIES LLC
0 cites - US118761362024Transistor Having Wrap-around Source/drain Contacts and Under-contact Spacers
International Business Machine Corporation
0 cites - US118322012023Small Cell Demodulation Reference Signal and Initial Synchronization
MALIKIE INNOVATIONS LIMITED
0 cites - US117910012023Non-volatile Memory with Updating of Read Compare Voltages Based on Measured Current
SANDISK TECHNOLOGIES LLC
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