15 Patents
- US124566772025Via Landing on First and Second Barrier Layers to Reduce Cleaning Time of Conductive Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
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- US120626872024Semiconductor Device Including a Capacitor
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
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- US119425432024Semiconductor Device Structure with High Voltage Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119234252024Shielding Structure for Ultra-high Voltage Semiconductor Devices
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118626752024High Voltage Metal-oxide-semiconductor (HVMOS) Device Integrated with a High Voltage Junction Termination (HVJT) Device
Taiwan Semiconductor Manufacturing Company, Ltd.
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- US117769012023Via Landing on First and Second Barrier Layers to Reduce Cleaning Time of Conductive Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117283742023Semiconductor Device Including a Capacitor
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US115880282023Shielding Structure for Ultra-high Voltage Semiconductor Devices
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites