Yi-jing Li

11 Patents

• US124647522025

  Method of Forming Shaped Source/drain Epitaxial Layers of a Semiconductor Device

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

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• US123640172025

  Semiconductor Structure, Electronic Device, and Method of Manufacturing Semiconductor Structure

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.

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• US122372292025

  Shallow Trench Isolation Structures Having Uniform Step Heights

  Taiwan Semiconductor Manufacturing Co., Ltd.

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• US121914012025

  Manufacturing Method for Semiconductor Structure Having a Plurality of Fins

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.

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• US121838022024

  Method of Manufacturing Semiconductor Devices and Semiconductor Devices

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

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• US120209502024

  Semiconductor Structure and Method for Forming Thereof

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.

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• US119424672024

  Semiconductor Structure, Electronic Device, and Method of Manufacturing Semiconductor Structure

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.

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• US119234362024

  Source/drain Structure for Semiconductor Device

  Taiwan Semiconductor Manufacturing Co., Ltd.

  0 cites
• US119161512024

  Semiconductor Structure Having Fin with All Around Gate

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.

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• US116996202023

  Shallow Trench Isolation Structures Having Uniform Step Heights

  Taiwan Semiconductor Manufacturing Co., Ltd.

  0 cites
• US115629102023

  Semiconductor Structure and Method for Forming Thereof

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.

  0 cites