8 Patents
- US123639942025Residue-free Metal Gate Cutting for Fin-like Field Effect Transistor
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US123100962025Method for Fabricating Semiconductor Structure with Cutting Depth Control
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US122181302025Semiconductor Structure Cutting Process and Structures Formed Thereby
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US121661052024Semiconductor Device Structure with Metal Gate Stacks
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119159802024Residue-free Metal Gate Cutting for Fin-like Field Effect Transistor
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US118550852023Semiconductor Structure Cutting Process and Structures Formed Thereby
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US118309262023Semiconductor Device Structure with Metal Gate Stacks
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117215882023Semiconductor Structure with Cutting Depth Control and Method for Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites