9 Patents
- US123896712025Source/drain Regions of Semiconductor Devices and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US122058492025Semiconductor Device Structure with Source/drain Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120947782024Fin Field-effect Transistor Device and Method of Forming
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120683952024Method for Forming an Undoped Region Under a Source/drain
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120574502024Epitaxy Regions with Large Landing Areas for Contact Plugs
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119232002024Integrated Circuits Having Source/drain Structure and Method of Making
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118044872023Source/drain Regions of Semiconductor Devices and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116521052023Epitaxy Regions with Large Landing Areas for Contact Plugs
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US115814252023Method for Manufacturing Semiconductor Structure with Enlarged Volumes of Source-drain Regions
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites