49 Patents
- US125622162026Circuit with Swept Voltage on Bit Line or Bit Line Bar
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US125433222026Ferroelectric Memory Device with Carrier Structures
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124628602025Using Split Word Lines and Switches for Reducing Capacitive Loading on a Memory System
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124631132025Memory Structure Having Novel Circuit Routing and Method for Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124262312025Structures of Sram Cell and Methods of Fabricating the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124067022025Switches to Reduce Routing Rails of Memory System
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
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- US123743962025Memory Including Metal Rails with Balanced Loading
Taiwan Semiconductor Manufacturing Company Ltd.
0 cites - US123763112025Three-dimensional Memory Device with Word Lines Extending Through Sub-arrays, Semiconductor Device Including the Same and Method for Manufacturing the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123619812025Using Embedded Switches for Reducing Capacitive Loading on a Memory System
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US123639082025Semiconductor Memory Devices with Varying Channel Width and Methods of Manufacturing Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123639092025Semiconductor Memory Devices and Methods of Manufacturing Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123224352025Sense Amplifier with Read Circuit for Compute-in-memory
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123025642025Memory Device Comprising Second Memory Cell Having First Terminal Coupled to First Signal Line Through First Memory Cell
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122664242025Memory Circuit and Method of Operating Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122493902025Memory Systems with Vertical Integration
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122435892025Memory Device and Method for Operating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US122056482025Three-dimensional One Time Programmable Memory
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121909312025Semiconductor Memory Devices and Methods of Manufacturing Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US121375712024Integrated Circuit Including Three-dimensional Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120680232024Memory Circuits, Memory Structures, and Methods for Fabricating a Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120624082024Switches to Reduce Routing Rails of Memory System
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US120481642024Memory Array and Operation Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120272042024Memory Including Metal Rails with Balanced Loading
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US1202904220243D Memory Device with Modulated Doped Channel
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US120024992024Using Split Word Lines and Switches for Reducing Capacitive Loading on a Memory System
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
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- US119421772024Using Embedded Switches for Reducing Capacitive Loading on a Memory System
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US119344802024NAND Block Architecture for In-memory Multiply-and-accumulate Operations
MACRONIX INTERNATIONAL CO., Ltd.
0 cites - US118546162023Memory Including Metal Rails with Balanced Loading
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118546632023Memory Circuit and Method of Operating Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118567832023Semiconductor Memory Devices with Different Thicknesses of Word Lines and Methods of Manufacturing Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118567862023Integrated Circuit Including Three-dimensional Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118237692023Reducing Capacitive Loading of Memory System Based on Switches
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117565912023Switches to Reduce Routing Rails of Memory System
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US117587342023Semiconductor Memory Devices and Methods of Manufacturing Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
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- US117440802023Three-dimensional Memory Device with Word Lines Extending Through Sub-arrays, Semiconductor Device Including the Same and Method for Manufacturing the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117051772023Semiconductor Memory Devices and Methods of Manufacturing Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116766412023Memory Systems with Vertical Integration
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites