23 Patents
- US125060742025Interconnect Structure to Reduce Contact Resistance, Electronic Device Including the Same, and Method of Manufacturing the Interconnect Structure
Samsung Electronics Co., Ltd.
0 cites - US124215982025Nanocrystalline Graphene and Method of Forming Nanocrystalline Graphene
Samsung Electronics Co., Ltd.
0 cites - US124083992025Semiconductor Device Including Two-dimensional Semiconductor Material
Samsung Electronics Co., Ltd.
0 cites - US123599112025Method of Calculating Thickness of Graphene Layer and Method of Measuring Content of Silicon Carbide by Using XPS
Samsung Electronics Co., Ltd.
0 cites - US122552442025Field Effect Transistor Including Gate Insulating Layer Formed of Two-dimensional Material
SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
0 cites - US122179582025Method of Pre-treating Substrate and Method of Directly Forming Graphene Using the Same
Samsung Electronics Co., Ltd.
0 cites - US121837802024Metal-to-semiconductor Contact Including a 2D Crystal Material Layer
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US120626972024Semiconductor Device Including Two-dimensional Semiconductor Material
Samsung Electronics Co., Ltd.
0 cites - US120466562024Semiconductor Device Including Surface-treated Semiconductor Layer
Samsung Electronics Co., Ltd.
0 cites - US120275882024Field Effect Transistor Including Channel Formed of 2D Material
Samsung Electronics Co., Ltd.
0 cites - US120275892024Semiconductor Device Including Graphene and Method of Manufacturing the Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites - US120028822024Vertical Type Transistor, Inverter Including the Same, and Vertical Type Semiconductor Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US119618982024Method of Patterning Two-dimensional Material Layer on Substrate, and Method of Fabricating Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites - US119062912024Method of Calculating Thickness of Graphene Layer and Method of Measuring Content of Silicon Carbide by Using XPS
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US118813992024Method of Forming Transition Metal Dichalcogenide Thin Film
RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
0 cites - US117641562023Layer Structure Including Diffusion Barrier Layer and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US116826222023Interconnect Structure Having Nanocrystalline Graphene Cap Layer and Electronic Device Including the Interconnect Structure
Samsung Electronics Co., Ltd.
0 cites - US116265022023Interconnect Structure to Reduce Contact Resistance, Electronic Device Including the Same, and Method of Manufacturing the Interconnect Structure
Samsung Electronics Co., Ltd.
0 cites - US115880342023Field Effect Transistor Including Gate Insulating Layer Formed of Two-dimensional Material
SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
0 cites - 0 cites
- US115631162023Vertical Type Transistor, Inverter Including the Same, and Vertical Type Semiconductor Device Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites