12 Patents
- 0 cites
- US124531532025Work-function Layers in the Gates of Pfets
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US124262922025Semiconductor Device with Tunable Threshold Voltage and Method for Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123826912025Effective Work Function Tuning via Silicide Induced Interface Dipole Modulation for Metal Gates
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122887222025Spacer Structure for Semiconductor Device and Method for Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121660742024Gate Structure in Semiconductor Device and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US121426492024Semiconductor Structure with Conductive Carbon Layer and Method for Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120403722024Contact Structures in Semiconductor Devices
Tawian Semiconductor Manufacturing Company, Ltd.
0 cites - US119905222024Effective Work Function Tuning via Silicide Induced Interface Dipole Modulation for Metal Gates
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US118109602023Contact Structures in Semiconductor Devices
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US115453972023Spacer Structure for Semiconductor Device and Method for Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites