Patents/Inventors

Yen-huei Chen

HsinchuTW78 patents

70 Patents

US125964942026
Integrated Circuit and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US125988012026
Semiconductor Device of Physical Unclonable Function and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US125866282026
Adjusting Pulse Width Based on Address Signal in Memory Devices
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US125866352026
Static Random Access Memory with Write Assist Circuit
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US125816352026
Integrated Circuit Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US125413192026
Computing-in-memory Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US125121312025
Memory Device, Method, Layout, and System
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US124511842025
Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US124311922025
Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US124126212025
Semiconductor Device Including Distributed Write Driving Arrangement
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US124067042025
Multi-stage Bit Line Pre-charge
Taiwan Semiconductor Manufacturing Company Limited
0 cites
US124083162025
Memory Array Circuit and Method of Manufacturing Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US123877682025
Memory Device Including Separate Negative Bit Line
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US123809462025
Memory Computation Method
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US123679292025
Memory Device Having a Negative Voltage Circuit
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US123461432025
Voltage Regulator with Power Rail Tracking
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US123341452025
Bitcell Supporting Bit-write-mask Function
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US123341782025
Integrated Circuit, System and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US123083032025
Integrated Circuit Die with Memory Macro Including Through-silicon via and Method of Forming the Same
TSMC NANJING COMPANY, LIMITED
0 cites
US122609032025
Memory Devices with Improved Bit Line Loading
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US122609042025
Memory Device with Additional Write Bit Lines
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US122454122025
SRAM Cell Word Line Structure with Reduced RC Effects
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US122303182025
Memory Device Including a Word Line with Portions with Different Sizes in Different Metal Layers
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US121834172024
Memory Device and Manufacturing Method of the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121760262024
Static Random Access Memory with a Supplementary Driver Circuit and Method of Controlling the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121648822024
In-memory Computation Circuit and Method
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121596882024
Systems and Methods for Memory Operation Using Local Word Lines
Taiwan Semiconductor Manufacturing Company Limited
0 cites
US121364602024
Floating Data Line Circuit and Method
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121364662024
Header Layout Design Including Backside Power Rail
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121375482024
Four CPP Wide Memory Cell with Buried Power Grid, and Method of Fabricating Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
0 cites
US121255232024
Memory Device and Method of Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121190522024
Low Voltage Memory Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121004362024
Method and System to Balance Ground Bounce
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120803412024
Memory Device Including Dual Control Circuits
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US120741562024
Memory Array Circuit and Method of Manufacturing Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120417612024
SRAM Circuits with Aligned Gate Electrodes
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120290232024
Memory Array Circuit and Method of Manufacturing Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119978432024
4CPP SRAM Cell and Array
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119890462024
Voltage Regulator with Power Rail Tracking
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US119615542024
Shared Power Footer Circuit
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119633482024
Integrated Circuit Read Only Memory (ROM) Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119486272024
Static Random Access Memory with Write Assist Circuit
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US119291162024
Memory Device Having a Negative Voltage Circuit
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US118549432023
Memory Macro Including Through-silicon Via
TSMC NANJING COMPANY, LIMITED
0 cites
US118305432023
Memory Computation Circuit
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US118305442023
Write Assist for a Memory Device and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites
US117986322023
Floating Data Line Circuit and Method
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US117838902023
Semiconductor Device Including Distributed Write Driving Arrangement
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US117788022023
SRAM Cell Word Line Structure with Reduced RC Effects
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US117695332023
Semiconductor Chip Having Memory and Logic Cells
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US117638822023
Low Voltage Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US117493212023
Multi-stage Bit Line Pre-charge
Taiwan Semiconductor Manufacturing Company Limited
0 cites
US117231942023
Integrated Circuit Read Only Memory (ROM) Structure
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US117145702023
Computing-in-memory Device and Method
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US117155012023
Header Layout Design Including Backside Power Rail
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US116824402023
Systems and Methods for Memory Operation Using Local Word Lines
Taiwan Semiconductor Manufacturing Company Limited
0 cites
US116755052023
Configurable Memory Storage System
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US116766602023
Static Random Access Memory with a Supplementary Driver Circuit and Method of Controlling the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US116578702023
Method and System to Balance Ground Bounce
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US116518042023
Memory Macro and Method of Operating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US116371082023
Memory Array Circuit and Method of Manufacturing Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US116314562023
Bitcell Supporting Bit-write-mask Function
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US116106282023
Static Random Access Memory
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US116056372023
SRAM Circuits with Aligned Gate Electrodes
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US115796482023
Voltage Regulator with Power Rail Tracking
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US115740982023
Method for Eliminating False Paths of a Circuit Unit to Be Implemented Using a System
Taiwan Semiconductor Manufacturing Company Limited
0 cites
US115746742023
SRAM Based Authentication Circuit
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US115692462023
Four CPP Wide Memory Cell with Buried Power Grid, and Method of Fabricating Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US115627862023
Memory Device Having a Negative Voltage Circuit
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US115629462023
Memory Macro Including Through-silicon Via
TSMC NANJING COMPANY, LIMITED
0 cites