11 Patents
- US1259896520263D NAND Memory Device with Isolation Trenches and Fabrication Method Thereof
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US125816492026Semiconductor Device, Fabrication Method, and Memory System
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US125576402026Three Dimensional (3D) Memory Device and Fabrication Method Using Self-aligned Multiple Patterning and Airgaps
Yangtze Memory Technologies Co., Ltd.
0 cites - US125433192026Semiconductor Device Including Reduced-size Transistors, Manufacturing Method Thereof, and NAND Memory Device
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US124462652025Semiconductor Devices and Methods for Manufacturing the Same, and NAND Memory Devices
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US123763072025Semiconductor Structure, Fabrication Method and Three-dimensional Memory
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US123622232025Semiconductor Structure, Fabrication Method and Three-dimensional Memory
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US123241982025Semiconductor Device and Manufacture Method Thereof
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US122782092025Peripheral Circuit Having Recess Gate Transistors and Method for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US121836232024Semiconductor Devices and Methods for Fabricating the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US120894132024Peripheral Circuit Having Recess Gate Transistors and Method for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites