Patents/Inventors

Yang-tai Hsiao

HsinchuTW1 patent

2 Patents

US124713112025
Semiconductor Fin-like Field-effect Transistor (finfet) Device Including Source/drain Structure with Boron Doped Capping Layer
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US119489992024
Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites