3 Patents
- US121838212024Single Transistor with Double Gate Structure for Adjustable Firing Threshold Voltage, and Neuromorphic System Using the Same
Korea Advanced Institute Of Science And Technology
0 cites - US119229882024Dynamic Random Access Memory Device with Long Retention and Operating Method Thereof
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
0 cites - US118699502024Steep-slope Field-effect Transistor and Fabrication Method Thereof
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
0 cites