Patents/Inventors

Yali Song

WuhanCN16 patents

16 Patents

US123546682025
Programming Method for Semiconductor Device and Semiconductor Device
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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US122600962025
Method of Reducing Vpass Disturb in 3D Nand Systems
Yangtze Memory Technologies Co., Ltd.
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US122625392025
3D NAND Memory Device and Method of Forming the Same
Yangtze Memory Technologies Co., Ltd.
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US122370252025
Memory Device, Memory System, and Program Operation Method Thereof
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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US121760432024
Three-dimensional Memory Device Programming with Reduced Disturbance
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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US121657162024
Method of Performing Programming Operation and Related Memory Device
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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US118758622024
Memory Including a Plurality of Portions and Used for Reducing Program Disturbance and Program Method Thereof
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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US118643792024
Three-dimensional Memory and Control Method Thereof
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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US118480582023
Method and Memory Used for Reducing Program Disturbance by Adjusting Voltage of Dummy Word Line
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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US118256562023
3D NAND Memory Device and Method of Forming the Same
Yangtze Memory Technologies Co., Ltd.
0 cites
US117214032023
Method of Programming and Verifying Memory Device and Related Memory Device
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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US117105292023
Three-dimensional Memory Device Programming with Reduced Disturbance
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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US116703732023
Three-dimensional Memory Device Programming with Reduced Threshold Voltage Shift
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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US116261702023
Method and Memory Used for Reducing Program Disturbance by Adjusting Voltage of Dummy Word Line
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US115942882023
Memory Including a Plurality of Portions and Used for Reducing Program Disturbance and Program Method Thereof
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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US115689412023
Memory Including a Plurality of Portions and Used for Reducing Program Disturbance and Program Method Thereof
Yangtze Memory Technologies Co., Ltd.
0 cites