13 Patents
- US125817212026Method for Gap Filling with Selectively Formed Seed Layer and Heteroepitaxial Cap Layer
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123083692025Method of Manufacturing a Semiconductor Device and a Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122887152025Semiconductor Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121971312025Method for Reducing Line-end Space in Integrated Circuit Patterning
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US121835732024Device and Method for High Pressure Anneal
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120464792024Nitride-containing STI Liner for Sige Channel
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119617682024CMOS Finfet Structures Including Work-function Materials Having Different Proportions of Crystalline Orientations and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119014422024Method of Manufacturing a Semiconductor Device and a Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118548002023Device and Method for High Pressure Anneal
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US116825892023CMOS Finfet Structures Including Work-function Materials Having Different Proportions of Crystalline Orientations and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116770152023Method of Manufacturing a Semiconductor Device and a Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116356952023Method for Reducing Line-end Space in Integrated Circuit Patterning
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116316122023Semiconductor Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites