Xue Bai Pitner

6 Patents

• US120272182024

  Location Dependent Sense Time Offset Parameter for Improvement to the Threshold Voltage Distribution Margin in Non-volatile Memory Structures

  Sandisk Technologies LLC

  0 cites
• US119728142024

  Verify Techniques for Current Reduction in a Memory Device

  Sandisk Technologies, LLC

  0 cites
• US118940812024

  EP Cycling Dependent Asymmetric/symmetric VPASS Conversion in Non-volatile Memory Structures

  SANDISK TECHNOLOGIES LLC

  0 cites
• US117497362023

  Three-dimensional Memory Device Including Discrete Charge Storage Elements and Methods for Forming the Same

  SANDISK TECHNOLOGIES LLC

  0 cites
• US116994942023

  Peak and Average ICC Reduction by Tier-based Sensing During Program Verify Operations of Non-volatile Memory Structures

  Sandisk Technologies LLC

  0 cites
• US115689432023

  Memory Apparatus and Method of Operation Using Zero Pulse Smart Verify

  Sandisk Technologies LLC

  0 cites