5 Patents
- US125657132026Method for Preparing Gallium Nitride (gan) Single-crystal Substrate with Edge Metal Mask Technology
Peking University
0 cites - US125531482026Preparation Method of Aluminum Nitride Composite Structure Based on Two-dimensional (2D) Crystal Transition Layer
PEKING UNIVERSITY
0 cites - US122060412025Method for Monolithic Integration Preparation of Full-color Nitride Semiconductor Micro Light-emitting Diode Array
Peking University
0 cites - US120517662024Method for Preparing Nitride Light Emitting Diode (LED) and Nondestructive Interface Separation
PEKING UNIVERSITY
0 cites - US118815482024Electronic Device, Semiconductor Device, Packaging Structure, Bracket and Method of Manufacturing the Bracket
SONGSHAN LAKE MATERIALS LABORATORY
0 cites