4 Patents
- US126220132026Folded Channel Gallium Nitride Based Field-effect Transistor and Method of Manufacturing the Same
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
0 cites - US123475912025Method for Improving Magnetic Properties of Cerium-yttrium-rich Rare Earth Permanent Magnet
Zhejiang University
0 cites - US122781042025Multi-layer Semiconductor Material Structure and Preparation Method Thereof
Institute Of Microelectronics Of The Chines Academy Of Sciences
0 cites - 0 cites