Patents/Inventors

Xin Miao

Guilderland, NYUS22 patents

20 Patents

US125987862026
Field Effect Transistor Structures
Adeia Semiconductor Solutions LLC
0 cites
US124083172025
SRAM Macro Design Architecture
Apple Inc.
0 cites
US124022932025
Stacked SRAM Cell Architecture
Apple Inc.
0 cites
US123567122025
Device Structure for Inducing Layout Dependent Threshold Voltage Shift
Apple Inc.
0 cites
US122306762025
Nanosheet Device with Tri-layer Bottom Dielectric Isolation
International Business Machines Corporation
0 cites
US121638632024
Detection System for Suspension System of Maglev Train
CRRC QINGDAO SIFANG CO., Ltd.
0 cites
US119825892024
Magnetic Levitation Test System and Electromagnet Test Method
CRRC QINGDAO SIFANG CO., Ltd.
0 cites
US119089372024
Vertical Transport Field-effect Transistor with Ring-shaped Wrap-around Contact
International Business Machines Corporation
0 cites
US118815052024
Tri-layer STI Liner for Nanosheet Leakage Control
International Business Machines Corporation
0 cites
US117610292023
Programmable Nuclease Compositions and Methods of Use Thereof
MAMMOTH BIOSCIENCES, Inc.
0 cites
US117642592023
Vertical Field-effect Transistor with Dielectric Fin Extension
International Business Machines Corporation
0 cites
US117396382023
Travelling-type Tunnel Hard-rock Micro-damage Cutting Equipment and Construction Method Associated Therewith
SHANDONG JIANZHU UNIVERSITY
0 cites
US117356582023
Tunnel Field-effect Transistor with Reduced Subthreshold Swing
International Business Machines Corporation
0 cites
US117283402023
Single Diffusion Break Isolation for Gate-all-around Field-effect Transistor Devices
International Business Machines Corporation
0 cites
US117055172023
Nanosheet Transistors with Strained Channel Regions
International Business Machines Corporation
0 cites
US116822102023
Methods and Device for Video Data Analysis
Kwai Inc.
0 cites
US116644222023
Nanosheet Transistor with Ultra Low-k Spacer and Improved Patterning Robustness
International Business Machines Corporation
0 cites
US116370412023
Method of Forming High Mobility Complementary Metal-oxide-semiconductor (CMOS) Devices with Fins on Insulator
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US116213482023
Vertical Transistor Devices with Composite High-k and Low-k Spacers with a Controlled Top Junction
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US115750422023
Tunnel Field-effect Transistor with Reduced Subthreshold Swing
International Business Machines Corporation
0 cites