105 Patents
- US126145912026Apparatus and Methods for Negative Threshold Voltages for Nonvolatile Memory Devices
Sandisk Technologies, Inc.
0 cites - US125964952026Power Saving During Open Block Read with Large Block Openness
Sandisk Technologies, Inc.
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- US125734562026Word Line Zone Based Unselect Word Line Bias to Enable Single-side Gate-induced Drain Leakage Erase
Sandisk Technologies, Inc.
0 cites - US125674712026Regular Transistor Threshold Voltage Refresh for Semi-circle Drain Side Select Gates
Sandisk Technologies, Inc.
0 cites - US125486262026Positive Sensing in Low Power Operation Mode in a Memory Device
Sandisk Technologies, Inc.
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- US125370652026Reducing Time-tag Read Errors with Respect to Non-volatile Memory Structures
Sandisk Technologies, Inc.
0 cites - 0 cites
- US125301422026Temperature Compensation for Pre-charge Spike in Multi-pass Programming
Sandisk Technologies, Inc.
0 cites - US125121682025Programming Techniques to Improve Erase State Upper Tails in a Memory Device
Sandisk Technologies, Inc.
0 cites - 0 cites
- US125058892025Methods to Improve Current Consumption and Read Time in Successive Reads
Sandisk Technologies, Inc.
0 cites - US125058852025Plane and Block Location Dependent Voltage Biases in NAND Memory
Sandisk Technologies, Inc.
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- US124888462025Negative Word Line Enabled Pre-boosting Strategy to Improve NAND Program Performance
Sandisk Technologies, Inc.
0 cites - US124888422025Channel Pre-charge Process for Memory Devices Using Hole Pre-charge Operation
Sandisk Technologies, Inc.
0 cites - US124759492025Non-volatile Memory with Efficient Precharge in Sub-block Mode
Sandisk Technologies, Inc.
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- US124628762025Single-level Cell Pump Skip Program Operation Preliminary Period Timing Optimization for Non-volatile Memory
Sandisk Technologies, Inc.
0 cites - US124565192025Asymmetric VREADK to Reduce Neighboring Word Line Interference in a Memory Device
Sandisk Technologies, Inc.
0 cites - US124565272025Reconfigurable Lines in Different Sub-block Modes in a NAND Memory Device
Sandisk Technologies, Inc.
0 cites - US124565352025Non-volatile Memory with Efficient Setting of Initial Program Voltage
Sandisk Technologies, Inc.
0 cites - US124378152025Delayed Select Gate Ramp-up for Peak Read Current Consumption Reduction for Non-volatile Memory Apparatus
Sandisk Technologies, Inc.
0 cites - 0 cites
- US124312032025Memory Program-verify with Adaptive Sense Time Based on Row Location
Sandisk Technologies, Inc.
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- US123878002025Multi-stage Programming Techniques with Three States per Memory Cell Parity
Sandisk Technologies, Inc.
0 cites - US123877932025Enabling Significant Scaling of Wordline Switch with Wordline Dependent Negative Bitline Voltage
Sandisk Technologies, Inc.
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- US123546822025Intermediate Re-verify for Achieving Tighter Threshold Voltage Distributions in a Memory Device
Sandisk Technologies, Inc.
0 cites - US123547042025Active Current Consumption Save Mode for Non-volatile Memory Using Fast Programming
SANDISK TECHNOLOGIES, Inc.
0 cites - 0 cites
- US122549312025Three-bit-per-cell Programming Using a Four-bit-per-cell Programming Algorithm
Sandisk Technologies, Inc.
0 cites - 0 cites
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- US122294152025Hole Channel Pre-charge to Enable Large-volume In-place Data Sanitization of Non-volatile Memory
Sandisk Technologies LLC
0 cites - US122240192025Cache Processes with Adaptive Dynamic Start Voltage Calculation for Memory Devices
Intel Corporation
0 cites - 0 cites
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- US121760372024Non-volatile Memory with Different Word Line to Word Line Pitches
Sandisk Technologies LLC
0 cites - 0 cites
- US121423152024Low Power Multi-level Cell (MLC) Programming in Non-volatile Memory Structures
Sandisk Technologies LLC
0 cites - US121128002024High Speed Multi-level Cell (MLC) Programming in Non-volatile Memory Structures
Sandisk Technologies LLC
0 cites - US121128122024Non-volatile Memory with Early Dummy Word Line Ramp Down After Precharge
Sandisk Technologies LLC
0 cites - 0 cites
- US120571662024Secondary Cross-coupling Effect in Memory Apparatus with Semicircle Drain Side Select Gate and Countermeasure
Sandisk Technologies LLC
0 cites - US120571752024Memory Apparatus and Method of Operation Using State Dependent Strobe Tier Scan to Reduce Peak ICC
Sandisk Technologies LLC
0 cites - US120463022024Edge Word Line Concurrent Programming with Verify for Memory Apparatus with On-pitch Semi-circle Drain Side Select Gate Technology
Sandisk Technologies LLC
0 cites - US120463052024Pre-position Dummy Word Line to Facilitate Write Erase Capability of Memory Apparatus
Sandisk Technologies LLC
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- US119728182024Refresh Frequency-dependent System-level Trimming of Verify Level Offsets for Non-volatile Memory
Sandisk Technologies, LLC
0 cites - US119728192024Non-volatile Memory with One Sided Phased Ramp Down After Program-verify
Sandisk Technologies LLC
0 cites - US119728202024Non-volatile Memory with Tier-wise Ramp Down After Program-verify
Sandisk Technologies LLC
0 cites - 0 cites
- US119615732024Memory Device That Is Optimized for Operation at Different Temperatures
Sandisk Technologies, LLC
0 cites - US119615722024Edge Word Line Data Retention Improvement for Memory Apparatus with On-pitch Semi-circle Drain Side Select Gate Technology
Sandisk Technologies, LLC
0 cites - US119551842024Memory Cell Group Read with Compensation for Different Programming Speeds
Sandisk Technologies LLC
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- US119355852024Pseudo Multi-plane Read Methods and Apparatus for Non-volatile Memory Devices
Sandisk Technologies LLC
0 cites - 0 cites
- US118940722024Two-side Staircase Pre-charge in Sub-block Mode of Three-tier Non-volatile Memory Architecture
SANDISK TECHNOLOGIES LLC
0 cites - US118940732024Proactive Refresh of Edge Data Word Line for Semi-circle Drain Side Select Gate
SANDISK TECHNOLOGIES LLC
0 cites - US118940672024Method to Fix Cumulative Read Induced Drain Side Select Gate Downshift in Memory Apparatus with On-pitch Drain Side Select Gate
SANDISK TECHNOLOGIES LLC
0 cites - US118940622024Semi-circle Drain Side Select Gate Maintenance by Selective Semi-circle Dummy Word Line Program
SANDISK TECHNOLOGIES LLC
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- US118812662024Neighbor Bit Line Coupling Enhanced Gate-induced Drain Leakage Erase for Memory Apparatus with On-pitch Semi-circle Drain Side Select Gate Technology
Sandisk Technologies LLC
0 cites - US118715802024Three-dimensional Memory Device Including Low-k Drain-select-level Isolation Structures and Methods of Forming the Same
SANDISK TECHNOLOGIES LLC
0 cites - US118622492024Non-volatile Memory with Staggered Ramp Down at the End of Pre-charging
Sandisk Technologies LLC
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- US118372922023String or Block or Die Level Dependent Source Line Voltage for Neighbor Drain Side Select Gate Interference Compensation
San Disk Technologies LLC
0 cites - US118237442023Programming Techniques for Memory Devices Having Partial Drain-side Select Gates
Sandisk Technologies LLC
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- US117839032023Proactive Edge Word Line Leak Detection for Memory Apparatus with On-pitch Semi-circle Drain Side Select Gate Technology
Sandisk Technologies LLC
0 cites - US117766432023Systems and Methods for Distributing Programming Speed Among Blocks with Different Program-erase Cycle Counts
Sandisk Technologies LLC
0 cites - US117766282023Systems and Methods for Adjusting Threshold Voltage Distribution Due to Semi-circle SGD
Sandisk Technologies LLC
0 cites - US116994952023String Dependent SLC Reliability Compensation in Non-volatile Memory Structures
Sandisk Technologies LLC
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- US116251722023Programming Memory Cells with Concurrent Redundant Storage of Data for Power Loss Protection
Sandisk Technologies LLC
0 cites - US116210452023Non Volatile Flash Memory with Improved Verification Recovery and Column Seeding
Intel Corporation
0 cites - 0 cites
- US115628002023Systems and Methods for Counting Program-erase Cycles of a Cell Block in a Memory System
Sandisk Technologies LLC
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- US115517812023Programming Memory Cells with Concurrent Storage of Multi-level Data as Single-level Data for Power Loss Protection
Sandisk Technologies LLC
0 cites - US115452212023Concurrent Programming of Multiple Cells for Non-volatile Memory Devices
Sandisk Technologies LLC
0 cites - US115452262023Systems and Methods for Compensating for Erase Speed Variations Due to Semi-circle SGD
Sandisk Technologies LLC
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