15 Patents
- US126219902026Split Gate Non-volatile Memory Cells, HV and Logic Devices with FINFET Structures, and Method of Making Same
Silicon Storage Technology, Inc.
0 cites - US125473272026Program Speed Compensation for Non-volatile Memory Cells
Silicon Storage Technology, Inc.
0 cites - US125113112025Data Processing Method and System
HANGZHOU ALICLOUD FEITIAN INFORMATION TECHNOLOGY CO., Ltd.
0 cites - US125110732025Coarse and Fine Programming of Non-volatile Memory Cells
Silicon Storage Technology, Inc.
0 cites - US124531362025Method of Forming a Device with Planar Split Gate Non-volatile Memory Cells, Planar HV Devices, and Finfet Logic Devices on a Substrate
Silicon Storage Technology, Inc.
0 cites - US121601432024High-voltage Permanent Magnet Frequency Conversion All-in-one Machine
QINGDAO CCS ELECTRIC CORPORATION
0 cites - US121441722024Method of Forming a Semiconductor Device with Memory Cells, High Voltage Devices and Logic Devices on a Substrate Using a Dummy Area
Silicon Storage Technology, Inc.
0 cites - US121317862024Memory Cell Array with Row Direction Gap Between Erase Gate Lines and Dummy Floating Gates
Silicon Storage Technology, Inc.
0 cites - US119688292024Method of Forming Memory Cells, High Voltage Devices and Logic Devices on a Semiconductor Substrate
SILICON STORAGE TECHNOLOGY, Inc.
0 cites - US117990052023Split-gate Flash Memory Cell with Improved Control Gate Capacitive Coupling, and Method of Making Same
Silicon Storage Technology, Inc.
0 cites - US117372662023Method of Forming a Semiconductor Device with Memory Cells, High Voltage Devices and Logic Devices on a Substrate
Silicon Storage Technology, Inc.
0 cites - US116521622023Method of Forming a Three-gate Non-volatile Flash Memory Cell Using Two Polysilicon Deposition Steps
Silicon Storage Technology, Inc.
0 cites - US116460782023Set-while-verify Circuit and Reset-while Verify Circuit for Resistive Random Access Memory Cells
SILICON STORAGE TECHNOLOGY, Inc.
0 cites - US116213352023Method of Making Split-gate Non-volatile Memory Cells with Erase Gates Disposed Over Word Line Gates
Silicon Storage Technology, Inc.
0 cites - US115944532023Method of Forming a Device with Split Gate Non-volatile Memory Cells, HV Devices Having Planar Channel Regions and FINFET Logic Devices
Silicon Storage Technology, Inc.
0 cites