13 Patents
- US125751372026Thin Film Transistor Including a Compositionally-modulated Active Region and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US125686562026Thin Film Transistor Including a Dielectric Diffusion Barrier and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US125638072026Semiconductor Structure and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124023502025Passivation Structure for a Thin Film Transistor
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124023582025Thin Film Transistor Including a Compositionally-modulated Active Region and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US123693542025Thin Film Transistor Including a Compositionally- Graded Gate Dielectric and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US122740702025Semiconductor Device and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122243522025Transistor Including an Active Region and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US121991882025Thin Film Transistor Including a Compositionally-modulated Active Region and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US121131152024Thin Film Transistor Including a Compositionally-graded Gate Dielectric and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US120404092024Thin Film Transistor Including a Dielectric Diffusion Barrier and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US119845082024Thin Film Transistor Including a Compositionally-modulated Active Region and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US119555612024Carrier Modification Devices for Avoiding Channel Length Reduction and Methods for Fabricating the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites