14 Patents
- US125324882026Semiconductor Device with Selectively Grown Field Oxide Layer in Edge Termination Region
Wolfspeed, Inc.
0 cites - 0 cites
- US122782842025Power Semiconductor Devices Including a Trenched Gate and Methods of Forming Such Devices
Wolfspeed, Inc.
0 cites - US122794482025Trench Bottom Shielding Methods and Approaches for Trenched Semiconductor Device Structures
Wolfspeed, Inc.
0 cites - 0 cites
- US120948762024Conduction Enhancement Layers for Electrical Contact Regions in Power Devices
Wolfspeed, Inc.
0 cites - US120949262024Sidewall Dopant Shielding Methods and Approaches for Trenched Semiconductor Device Structures
Wolfspeed, Inc.
0 cites - 0 cites
- US120093892024Edge Termination for Power Semiconductor Devices and Related Fabrication Methods
WOLFSPEED, Inc.
0 cites - US118376572023Gate Trench Power Semiconductor Devices Having Improved Deep Shield Connection Patterns
Wolfspeed, Inc.
0 cites - US117642952023Gate Trench Power Semiconductor Devices Having Improved Deep Shield Connection Patterns
Wolfspeed, Inc.
0 cites - US116644342023Semiconductor Power Devices Having Multiple Gate Trenches and Methods of Forming Such Devices
Wolfspeed, Inc.
0 cites - US116409902023Power Semiconductor Devices Including a Trenched Gate and Methods of Forming Such Devices
Wolfspeed, Inc.
0 cites - US116109912023Gate Trench Power Semiconductor Devices Having Improved Deep Shield Connection Patterns
Wolfspeed, Inc.
0 cites