5 Patents
- US123896602025Semiconductor Device Including Backside Contact Structure with Silicide Layer Formed in FEOL Process
SAMSUNG ELECTRONICS CO., Ltd.
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- US120210802024Semiconductor Device and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US117423512023Semiconductor Device and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites