William Lynn Luter

6 Patents

• US125955842026

  Systems and Methods for Producing a Single Crystal Silicon Ingot Using a Vaporized Dopant

  Globalwafers Co., Ltd.

  0 cites
• US125037902025

  Systems and Methods for Producing a Single Crystal Silicon Ingot Using a Vaporized Dopant

  Globalwafers Co., Ltd.

  0 cites
• US122217182025

  Systems and Methods for Controlling a Gas Dopant Vaporization Rate During a Crystal Growth Process

  Globalwafers Co., Ltd.

  0 cites
• US121958712025

  Systems and Methods for Controlling a Gas Dopant Vaporization Rate During a Crystal Growth Process

  Globalwafers Co., Ltd.

  0 cites
• US118668442024

  Methods for Producing a Single Crystal Silicon Ingot Using a Vaporized Dopant

  Globalwafers Co., Ltd.

  0 cites
• US117955692023

  Systems for Producing a Single Crystal Silicon Ingot Using a Vaporized Dopant

  Globalwafers Co., Ltd.

  0 cites